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Created by nicole.aimee
about 10 years ago
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| Question | Answer |
| Ionic Solids Melting Point | High Melting point - strong ionic bonds, lots of energy required to break |
| Ionic Solids structure | 3D lattice - strong ionic bonds, ions in fixed positions |
| Ionic Solids conductivity | Do not conduct when solid - ions fixed, no charges free to move Do conduct when molten - ions free to move, lattice structure broken |
| Ionic Solids malleable | Directional bonds - if ions shift like charges repel, latice structure breaks |
| Ionic Solids solubility | Soluble in H20 - polar molecules attract ions, pull out of lattice structure Not soluble in non-polar solution - no attraction |
| Molecular Solids melting point | Low melting point - weak intermolecular forces (between molecules), little energy required to break |
| Molecular Solids covalent bonds | Between atoms - these do not break when melting |
| Molecular Solids conductivity | Do not conduct - no charges |
| Molecular Solids soft, brittle | Weak intermolecular forces - easily broken |
| Molecular Solids solubility | "Like dissolves like" Polar dissolves in polar Non polar dissolves in non polar - weak intermolecular forces which can exist between different molecules |
| Metal Solids melting point | Strong attraction between valence electrons and nuclei of neighbouring atoms - lots of energy required to break |
| Metal Solids structure | 3D lattice - valence electrons attracted to nuclei of neighbouring atoms |
| Metal Solids malleable | Non directional bonds - atoms move without breaking lattice |
| Metal Solids solubility | Not soluble as metallic bonds too strong to overcome - lots of energy needed to break |
| Covalent Network melting point | High melting point - strong covalent bonds, lots of energy required to break |
| Covalent Network Graphite Properties | Trigonal planar - C atom bonded to 3 other C atoms in layers Soft - weak intermolecular forces between layers |
| Covalent Network Diamond Properties | Tetrahedral - C atom bonded to 4 other C atoms (3D arrangement) |
| Covalent Network Silicon Dioxide Properties | Si and O atoms bonded in tetrahedral (3D arrangement) |
| Collision Theory | Particles collide with min activation energy Collide at correct orientation |
| Increase rate of reaction | Increase frequency of collisions Increase portion of collisions with min activation energy |
| Factors affecting Rate of Reaction | Inc. concentration - inc. frequency Inc. surface area - inc. frequency Inc. Temperature - inc. frequency and portion with min Ea |
| Catalyst | Increases rate of reaction without undergoing change Creates alternate path for the reaction to occur Greater portion of collisions with min Ea |
| Le Chatelier | Change made to a system in equilibrium results in a shift of equilibrium in the direction that minimises change |
| Equilibrium properties | Forward/backward reactions at equal rate Reactants and products present Concentrations remain constant |
| Equilibrium constant affected by... | Temperature |
| How pressure affects equilibrium | Inc. in pressure causes shift of equilibrium to side with less gaseous particles |
| How temperature affects equilibrium | Inc. favours endothermic (+ change in H) Dec. favours exothermic (- change in H) |
| How catalysts affect equilibrium | Catalysts do not affect equilibrium |
| + change in heat | Forwards reaction endothermic Backward reaction exothermic |
| - change in heat | Forward reaction exothermic Backwards reaction endothermic |
| Name strong acids | HCl NH03 H2SO4 |
| Name strong bases | NaOH KOH Ca(OH)2 |
| Strong acids... | Low pH High H3O+ concentration Completely dissociate |
| Strong Bases | High pH High concentration of OH- Completely dissociate |
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